| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem wherein when a semiconductor film is scanned relatively and is irradiated with a CW laser in the manufacturing process of a semiconductor device, characteristics practically approximate to a single crystal is obtained in the scanning direction, but productivity and uniformity of laser anneal are inferior and massproduction is difficult. SOLUTION: A plurality of laser beams are shaped into a linear beam, and made to approach to each other and are given a overlapped part, thereby forming a longer linear beam and improving the productivity. When positional relation, satisfying a prescribed confinement formula, is imparted to the mutually adjacent linear beams, uniformity of laser annealing is markedly improved. COPYRIGHT: (C)2004,JPO&NCIPI
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