| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that the threshold voltages Vt are different among manufactured individual pieces of a semiconductor device in which a group-III impurity is doped to a polysilicon film or an amorphous silicon film that is closely attached to a nitride film. SOLUTION: A nitride film, which is a gate mask for the semiconductor device, is formed at 750°C or higher at which hydrogen is removed from the nitride film. Alternatively, the nitride film is formed using ammonia gas and silane gas, under the condition in which the quantity of flow of the ammonia gas is twenty times that of the silane gas or more. COPYRIGHT: (C)2004,JPO&NCIPI
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