| 摘要 |
PROBLEM TO BE SOLVED: To enable a resin film having superior moistureproofness and an insulating inorganic compound superior in chemical resistance and solvent resistance to be formed on the surface of a semiconductor so as to provide a semiconductor device and a semiconductor light-receiving device which display high reliability. SOLUTION: A mesa-type semiconductor element formed on a semiconductor substrate is equipped with a protective film composed of a benzocyclobutene resin film 11 kept in contact with the surface of the semiconductor of the semiconductor element, and an insulating inorganic compound film 12 formed on the benzocyclobutene resin film 11. At this point, the insulating inorganic compound film 12 is preferably a film inducing a tensile stress and selected from a film group composed of a silicon nitride film, a silicon oxide nitride film, a silicon oxide film, an aluminum oxide film and titanium oxide film, and the benzocyclobutene resin film 11 is preferably formed of a photosensitive benzocyclobutene resin composition. COPYRIGHT: (C)2004,JPO&NCIPI
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