| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for transferring a layer to be transferred on a wafer with highly dimensional accuracy. SOLUTION: A peeling layer is uniformly applied onto a quartz plate, and a deposition layer formed of only the peeling layer is formed (step S1:deposition layer forming process). A minute pattern as the transferred layer is formed on the peeling layer formed in the quartz plate (step S2; transferred layer forming process). The quartz plate and the wafer W are positioned so that the minute pattern is confronted with a transfer position of the wafer W. The plate and the wafer are moved in a direction where they are adjacent when they satisfy a prescribed transfer condition, and the minute pattern is closely brought into contact with a surface of the wafer W (step S4; close contact process). Only the quartz plate is separated from the wafer W and transfer of the minute pattern is completed while the peeling layer is selectively removed by a laser ablation processing and the minute pattern is made to closely adhere onto the wafer W (step S5: peeling process). COPYRIGHT: (C)2004,JPO&NCIPI
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