发明名称 |
System and method for isolating silicon germanium dislocation regions in strained-silicon CMOS applications |
摘要 |
A dual gate strained-Si MOSFET with thin SiGe dislocation regions and a method for fabricating the same are provided. The method comprises: forming a first layer of relaxed SiGe overlying a substrate, having a thickness of less than 5000 Å; forming a second layer of relaxed SiGe overlying the substrate and adjacent to the first layer of SiGe, having a thickness of less than 5000 Å; forming a layer of strained-Si overlying the first and second SiGe layers; forming a shallow trench isolation region interposed between the first SiGe layer and the second SiGe layer; forming an n-well in the substrate and the overlying first layer of SiGe; forming a p-well in the substrate and the overlying second layer of SiGe; forming channel regions, in the strained-Si, and forming PMOS and NMOS transistor source and drain regions.
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申请公布号 |
US2004135138(A1) |
申请公布日期 |
2004.07.15 |
申请号 |
US20030345551 |
申请日期 |
2003.01.15 |
申请人 |
SHARP LABORATORIES OF AMERICA, INC. |
发明人 |
HSU SHENG TENG;LEE JONG-JAN;TWEET DOUGLAS J.;MAA JER-SHEN |
分类号 |
H01L21/322;H01L21/762;H01L21/8238;H01L27/092;H01L27/12;H01L29/10;H01L29/78;H01L29/786;(IPC1-7):H01L29/06 |
主分类号 |
H01L21/322 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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