发明名称 |
Interconnections having double capping layer and method for forming the same |
摘要 |
Provided are an interconnection of a semiconductor device which includes a capping layer and a method for forming the interconnection. The interconnection of the semiconductor device is a copper damascene interconnection where the capping layer is formed as a dual layer of a silicon nitride layer and silicon carbide layer on a copper layer processed by chemical mechanical polishing (CMP). Therefore, it is possible to maintain a high etching selectivity and a low dielectric constant of the silicon carbide layer while providing superior leakage suppression.
|
申请公布号 |
US2004135261(A1) |
申请公布日期 |
2004.07.15 |
申请号 |
US20030744277 |
申请日期 |
2003.12.23 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE KYOUNG-WOO;LEE SOO-GEUN;PARK KI-CHUL;SONG WON-SANG |
分类号 |
H01L23/522;H01L21/28;H01L21/3205;H01L21/768;H01L23/52;H01L23/532;(IPC1-7):H01L23/48 |
主分类号 |
H01L23/522 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|