METHOD OF MANUFACTURING AN OXIDE BEAM

摘要

A method of manufacturing an insulating micro-structure (100) by etching a plurality of trenches in a silicon substrate (101) and filling said trenches with insulating materials (105, 107). The trenches are etched and then oxidized until completely or almost completely filled with silicon dioxide. Additional insulating material is then deposited as necessary to fill any remaining trenches, thus forming the structure. When the top of the structure is metallized, the insulating structure increases voltage resistance and reduces the capacitive coupling between the metal (109) and the silicon substrate. Part of the silicon substrate underlying the structure is optionally removed further to reduce the capacitive coupling effect. Hybrid silicon-insulator structures can be formed to gain the effect of the benefits of the structure in three-dimensional configurations, and to permit metallization of more than one side of the structure.