SILICON SINGLE CRYSTAL, SEMICONDUCTOR WAFER OBTAINED FROM THE SAME, AND PROCESS AND APPARATUS FOR PRODUCING SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide an improved process allowing the concentration of internal defects and of foreign substances such as oxygen and dopant in the radial direction to be adjustable in a targeted fashion within a narrow range. SOLUTION: In the process for producing a single crystal, a temperature distribution which deviates from rotational symmetry is produced in the region of a solidification front in melt when the single crystal is pulled from the melt which is held in a rotating crucible by using a Czochralski method. A silicon single crystal which, over an ingot length of over 10% of the total ingot length, has a uniform defect image and narrow radial dopant and oxygen variations is obtained by the process. COPYRIGHT: (C)2004,JPO&NCIPI