| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device which can be operated at a high speed by building the body of the field effect transistor with SOI structure into a floating structure, and which has little variations in hysteresis delay. SOLUTION: The semiconductor integrated circuit device has such a structure that a plurality of insular semiconductor regions (NMOS regions 13N) are formed on an insulation layer 12, and that field effect transistors (N-channel MOS transistors) NT1 and NT2 are formed in respective semiconductor regions. Out of the plurality of field effect transistors, the field effect transistors NT1 and NT2 have the same conductivity type and operate by opposite phases. The bodies 13N of the field effect transistors NT1 and NT2 are electrically connected to each other through a partial region 13a of the semiconductor layer. The bodies 13N are built in a floating structure, thus enabling a rapid operation of the field effect transistors. By electrically connecting the bodies of the field effect transistors of opposite phases, a dynamic component of the body potential in each transistor is canceled, thereby keeping the body potential nearly constant. At the same time, variations in hysteresis delay can be avoided in each field effect transistor. COPYRIGHT: (C)2004,JPO&NCIPI |
