| 摘要 |
PROBLEM TO BE SOLVED: To provide a vertical-cavity surface-emitting laser in which the difference in an oxidation rate depending on the lattice orientation of the semiconductor is overcome to provide an almost circular oxidation aperture, and a method of manufacturing the same. SOLUTION: The vertical-cavity surface-emitting laser is constituted by a substrate, a lower reflecting layer formed by lamination on the substrate, an active layer formed on the lower reflecting layer and for generating the light, an insulating region formed on the active layer and provided with an opening for guiding the flow of current, an upper reflecting layer formed by lamination on the insulating region, trenches formed by leading to the upper reflecting layer, the active layer, and at least a part of the lower reflecting layer and by dividing into segments of specific pieces to adjust the oxidation rate of an oxidizable layer for forming the insulating region, an insulating film formed on the walls of the trenches, an upper electrode formed on the upper reflecting layer, and a lower electrode formed on the lower part of the substrate. COPYRIGHT: (C)2004,JPO&NCIPI
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