发明名称 NANO-IMPRINT LITHOGRAPHY METHOD INVOLVING SUBSTRATE PRESSING
摘要 <p>The invention relates to a lithography method involving the pressing of a substrate (1). The inventive method consists of the following steps: a preparation step during which the substrate is covered with a layer (2), a pressing step in which a mould (3) comprising a pattern of recesses (5) and protrusions (4) is pressed such as to penetrate part of the thickness of the aforementioned layer, at least one etching step in which the layer is etched until parts of the surface of the substrate have been stripped, and an etching step whereby the substrate is etched using an etching pattern which is defined from the mould pattern. The invention is characterised in that the preparation step comprises: a sub-step consisting of the formation of a lower sub-layer (2A) of curable material, a step involving the curing of said layer and a sub-step consisting of the formation of an outer sub-layer (2B) which is adjacent to the cured sub-layer. Moreover, during the pressing step, the above-mentioned protrusions in the mould penetrate the outer sub-layer until contact is reached with the cured sub-layer.</p>
申请公布号 WO2004059386(A1) 申请公布日期 2004.07.15
申请号 WO2003FR03866 申请日期 2003.12.22
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE;CENTER NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS);PERRET, CORINNE;GOURGON, CECILE;LANDIS, STEPHAN 发明人 PERRET, CORINNE;GOURGON, CECILE;LANDIS, STEPHAN
分类号 G03F7/00;G03F7/11;(IPC1-7):G03F7/00;G03F7/09;B81C1/00;B29C59/02 主分类号 G03F7/00
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