发明名称 |
SEMICONDUCTOR FILM AND ITS MANUFACTURING METHOD, SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD, AND GETTERING DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device and a gettering device by which the contraction of a substrate can be suppressed even when gettering is performed. SOLUTION: The method of manufacturing semiconductor device includes a step for forming a base film 109 on the substrate 110; a step for forming a crystalline silicon film 114 containing impurities on the base film 109; and a step for performing gettering by melting a portion 113 of the crystalline silicon film 114 by projecting a continuously wave-oscillated laser beam 112 upon the film 114 in the portion 113, and moving the melted portion 113 of the film 114 by moving the laser beam 112 relatively to the film 114. COPYRIGHT: (C)2004,JPO&NCIPI |
申请公布号 |
JP2004200285(A) |
申请公布日期 |
2004.07.15 |
申请号 |
JP20020365059 |
申请日期 |
2002.12.17 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD;SHARP CORP |
发明人 |
ONUMA HIDETO;MAKITA NAOKI |
分类号 |
G02F1/1368;H01L21/20;H01L21/268;H01L21/322;H01L21/336;H01L29/786;(IPC1-7):H01L21/20;G02F1/136 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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