| 摘要 |
PROBLEM TO BE SOLVED: To form a multilayer wiring using a porous low permittivity film and copper wirings while the increase of the effective permittivity of an interlayer insulating film is suppressed to the minimum. SOLUTION: A method for manufacturing a semiconductor device includes the steps of forming a porous MSQ(2) on a silicon substrate 1, and forming an SiC mask 3 on the porous MSQ(2). The method further includes the steps of forming a wiring groove 5 on the porous MSQ(2) by plasma etching with this SiC mask 3 as a mask. The method also includes the steps of forming a polyxylylene fluoride film 6 on the entire surface of the silicon substrate 1 including the side face of the wiring groove 5, and removing the unnecessary polyxylylene fluoride film 6 formed except the side face of the wiring groove 5. The method also includes the steps of forming a barrier metal film and a seed layer in the wiring groove 5, and depositing a metal. COPYRIGHT: (C)2004,JPO&NCIPI |
