LITHOGRAPHY PROJECTION MASK, METHOD FOR MANUFACTURING DEVICE BY LITHOGRAPHY PROJECTION MASK, AND DEVICE MANUFACTURED BY THIS METHOD

摘要

PROBLEM TO BE SOLVED: To provide an improved method to measure the relative location of a plurality of patterns produced on a substrate. SOLUTION: This method is to measure the relative position of the patterns produced on the substrate by a step mode, using a reference mark overlaid on the device pattern. In this specification, a mark of the lithography apparatus including the reference mark to use in the method is also disclosed. COPYRIGHT: (C)2004,JPO&NCIPI