| 摘要 |
PROBLEM TO BE SOLVED: To provide an NAND type magnetic resistance RAM which can reduce an effective area per cell by performing tandem arrangement for an element of a magnetic resistance RAM or the like in an NAND type. SOLUTION: The NAND type magnetic resistance RAM reduces a non-active region by connecting two or more transistors sharing source and drain regions in an NAND type in series and improves integration degree by reducing an effective area per cell by improving read-out performance by sharing one read-out node connected to a bit line with a plurality of transistors. COPYRIGHT: (C)2004,JPO&NCIPI
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