发明名称 POWER GATING CIRCUIT AND METHOD OF OPERATING IT
摘要 PROBLEM TO BE SOLVED: To minimize a leakage current and power losse resulting from the leakage current. SOLUTION: A power gating circuit contains a MOS circuit having first and second power supply terminals for a memory circuit etc., a P-channel transistor 12 having a drain coupled with the first power supply terminal of the MOS circuit, and an N-channel transistor 16 having a drain coupled with the second power supply terminal of the MOS circuit. Negative V<SB>GS</SB>voltages are set in the transistors 12 and 16 in a standby mode and boosted V<SB>GS</SB>voltages are set in the transistors 12 and 16 in an active mode. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004201268(A) 申请公布日期 2004.07.15
申请号 JP20030145060 申请日期 2003.05.22
申请人 UNITED MEMORIES INC;SONY CORP 发明人 PARRIS MICHAEL C;KIM C HARDY
分类号 H03F3/72;H03K17/00;H03K17/687;H03K19/00;(IPC1-7):H03K17/687 主分类号 H03F3/72
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