发明名称 APPARATUS AND METHOD FOR TREATING MULTILAYER FILM
摘要 PROBLEM TO BE SOLVED: To provide a multilayer film producing apparatus which prevents oxidation, and deterioration in film properties. SOLUTION: A substrate 12 having a barrier metal coated on its surface is transported to a metal film production apparatus 3 in a state where oxidation is prevented by using a transport chamber 4 in a vacuum state. The member to be etched is subjected to etching in gaseous starting material plasma, so that the precursor of a metal component(s) included in the member to be etched and the gaseous starting material is produced inside a chamber 11. The temperature of the substrate 12 is made lower than that of the member to be etched, so that the metallic component(s) in the precursor is film-deposited on the substrate. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004197196(A) 申请公布日期 2004.07.15
申请号 JP20020369691 申请日期 2002.12.20
申请人 MITSUBISHI HEAVY IND LTD 发明人 SAKAMOTO HITOSHI;NISHIMORI TOSHIHIKO
分类号 B65G49/00;C23C16/14;C23C16/44;H01L21/02;H01L21/285;H01L21/677;H01L21/68;(IPC1-7):C23C16/14 主分类号 B65G49/00
代理机构 代理人
主权项
地址