| 摘要 |
PROBLEM TO BE SOLVED: To reduce an incubation time for forming a film, in a method for forming a metallic film through a CVD process using a metal carbonyl as a raw material. SOLUTION: The method for forming the metal film by using a metal carbonyl compound as a raw material comprises the first step of introducing a reactive gas into a space in the proximity of the surface of a substrate to be treated, and the second step of introducing a vapor-phase raw material containing the metal carbonyl compound into the space on the surface of the substrate, after the first step, to deposit a metal film on the surface of the substrate, wherein in the first step, the metal film is substantially inhibited from depositing on the substrate. COPYRIGHT: (C)2004,JPO&NCIPI
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