| 摘要 |
A photolithography step is carried out for exposing/etching a resist film in an etching step. Thereafter a superposition inspection step employing a superposed layer superposition mark and a resist film superposition mark is carried out with a superposition inspection apparatus. In this step, an applied mask confirmation step is simultaneously carried out with the superposition inspection apparatus. Thus, it is possible to provide a method of fabricating a semiconductor device including a superposition inspection step, capable of efficiently confirming an applied mask and improving the fabrication yield for the semiconductor device.
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