| 发明名称 |
Selectable area laser assisted processing of substrates |
| 摘要 |
A system and method for selectable area laser treatment of a substrate, such as thin film transistors, the system including a holder holding a substrate in proximity to reactant, and laser beams each addressing independently selectable mutually set apart locations on the substrate to induce a reaction between the substrate and the reactant.
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| 申请公布号 |
US2004137731(A1) |
申请公布日期 |
2004.07.15 |
| 申请号 |
US20030694392 |
申请日期 |
2003.10.28 |
| 申请人 |
|
发明人 |
GLAZER ARIE;GROSS ABRAHAM |
| 分类号 |
B23K26/00;B23K26/067;B23K26/08;B23K26/14;B23K26/34;C23C14/58;H01L21/20;H01L21/268;H01L21/302;H01L21/461;H01L21/77;(IPC1-7):H01L21/302 |
主分类号 |
B23K26/00 |
| 代理机构 |
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代理人 |
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