发明名称 Semiconductor integrated circuit device
摘要 A semiconductor chip is divided into a first semiconductor region surrounded by pads and a region outside the pads. A memory is arranged at the region outside the pads. A memory arranged in the first semiconductor region and the memory arranged outside the pads are coupled to a bus interface unit via separate memory buses and a selector. The selector is driven by two phase, non-overlapping clock signals. A semiconductor integrated circuit device is provided that can easily accommodate for modification in the memory capacity of the memory and that can transfer signal/data at high speed with a low power consumption, irrespective of modification in bus interconnection length.
申请公布号 US2004136260(A1) 申请公布日期 2004.07.15
申请号 US20030742886 申请日期 2003.12.23
申请人 RENESAS TECHNOLOGY CORP. 发明人 NAGATA SHINYA;WATANABE KATSUYOSHI;IKEMOTO MASAHIKO
分类号 G11C11/41;G11C5/02;G11C5/06;G11C7/10;G11C11/401;G11C11/408;G11C11/413;G11C11/417;G11C16/02;H01L21/82;H01L21/822;H01L27/04;(IPC1-7):G11C8/00 主分类号 G11C11/41
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