发明名称 |
SEMICONDUCTOR CHIP AND MANUFACTURING METHOD THEREFOR |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor chip in which a plurality of element-forming layers formed as a thin film are integrated by using a transfer technology. <P>SOLUTION: The element-forming layer of a film thickness 50μm or smaller once separated from a substrate is transferred to the other substrate by using the transfer technology. Furthermore the element-forming layer of a film thickness 50μm or smaller separated from the other substrate is repeatedly transferred to be superimposed thereon, thereby forming a semiconductor chip which obtains the formation of a thinner film and higher integration than that of a prior art mounted in a three-dimensional manner. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
申请公布号 |
JP2004200522(A) |
申请公布日期 |
2004.07.15 |
申请号 |
JP20020368947 |
申请日期 |
2002.12.19 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAZAKI SHUNPEI;TAKAYAMA TORU;MARUYAMA JUNYA;ONO YUMIKO |
分类号 |
H01L25/18;H01L21/02;H01L21/336;H01L21/68;H01L21/77;H01L21/98;H01L23/52;H01L25/065;H01L25/07;H01L27/00;H01L27/12;H01L29/786 |
主分类号 |
H01L25/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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