| 摘要 |
705,280. Semiconductor devices. COMPAGNIE DES FREINS ET SIGNAUX WESTINGHOUSE. March 13, 1951 [June 28, 1950], No. 6016/51. Class 37 A semiconductor device comprises a block 1 of semiconductor with electrodes 4 and 4<SP>1</SP> on each of its two end faces, and having a thin central portion of 1 to 500 microns thick, the thickness of the semiconductor increasing continuously and at an increasing rate; from the central portion to the end portions. Electrodes 4 and 4<SP>1</SP> are ohmic contacts. Various other shapes of semiconductor are described, including some which resemble a concavo-concave or convexo-concave cylindrical lens. It is alleged that shaping in this way facilitates the handling of these blocks while providing certain desired resistance characteristics in the thin central portion. A further electrode, comprising a point contact or an area contact, may be provided in the region of the thin portion. Shaping may be effected by moulding the semiconductor material, which may be germanium, on to a shaped core, and then grinding the opposite surface to produce the desired thickness. The electrodes may be of iron, copper, aluminium, silver, gold, or platinum. The arrangement is said to be applicable to rectifiers and transistors.
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