| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a surface emitting type semiconductor laser in which reliability is improved by suppressing the release of a semiconductor layer from an interlayer insulating film. <P>SOLUTION: The surface emitting type semiconductor laser includes a substrate 12, a plurality of semiconductor layers 13-23 laminated on the substrate 12, a mesa 3 formed on the plurality of the semiconductor layers and having a laser beam emitting port, and the interlayer insulating film 24 covering the plurality of the semiconductor layers on at least the side of the mesa and the periphery of the mesa. The end of the interlayer insulating film covering the peripheral side of the mesa is terminated at the inside from the cutting surface of the substrate. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
