| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide nonvolatile memory capable of writing in a plurality of memory cells in batch connected to the same word line. <P>SOLUTION: Each memory cell 10 of a memory cell array 20 is provided with a source line SL separated for each column unit. At the time of writing, each source line is applied with either 1st voltage or 2nd voltage according to the data to be written, and after 1st negative control voltage is applied to a control word line CWL, the control word line is applied with 2nd high control voltage in the state of maintaining the voltage of each source line SL . Therefore, each memory cell 10 is erased or programmed according to the voltage applied to each source line SL. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
