THIN-FILM TRANSISTOR HAVING LDD/OFFSET STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide an organic electroluminescent device which is provided with an LDD(Lightly Doped Drain)/offset region where a "primary" grain boundary of polysilicon is not included in the LDD/offset regions in order improve electrical characteristics such as electrical current characteristics. SOLUTION: The thin-film transistor having LDD/offset regions to be provided is constituted such that a "primary" grain boundary of the polysilicon base layer is not positioned in the LDD/offset regions, thereby a thin-film transistor having excellent electrical characteristics such as leakage current characteristics is provided. COPYRIGHT: (C)2004,JPO&NCIPI