| 发明名称 |
Logic-merged memory |
| 摘要 |
In a memory circuit, a transistor formed in the same process as that of a logic transistor is used for peripheral circuitry except for a region to be supplied with high voltage. Thus, the manufacturing process can be simplified and a logic-merged memory operating at a high speed is provided.
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| 申请公布号 |
US2004136230(A1) |
申请公布日期 |
2004.07.15 |
| 申请号 |
US20030714393 |
申请日期 |
2003.11.17 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
NODA HIDEYUKI;ARIMOTO KAZUTAMI;DOSAKA KATSUMI;FUJINO TAKESHI |
| 分类号 |
G11C11/401;G11C5/02;G11C7/10;G11C7/18;G11C11/407;G11C29/12;H01L27/10;H01L27/108;(IPC1-7):G11C11/00 |
主分类号 |
G11C11/401 |
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