| 发明名称 |
Method to reduce dishing, erosion and low-k dielectric peeling for copper in low-k dielectric CMP process |
| 摘要 |
A new method of Chemical Mechanical Polishing of copper surfaces. During the process of CMP and at predetermined instances within the process of CMP, Surface Active Agents of different concentrations are added as a polishing agent of the copper surface that is being polished.
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| 申请公布号 |
US2004137740(A1) |
申请公布日期 |
2004.07.15 |
| 申请号 |
US20030345762 |
申请日期 |
2003.01.15 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
CHUNG CHI-WEI;CHEN YING-HO;JANG SYUN-MING;SHIH TSU |
| 分类号 |
C11D3/37;C11D11/00;H01L21/321;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
C11D3/37 |
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