| 发明名称 |
Insulated gate bipolar transistor and electrostatic discharge cell protection utilizing insulated gate bipolar transistors |
| 摘要 |
IGBTs and circuits can be designed to improve the ability of circuits and systems to withstand ESD events. In addition pads can be designed to take advantage of the circuits and IGBTs to withstand and dissipate ESD events.
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| 申请公布号 |
US2004137690(A1) |
申请公布日期 |
2004.07.15 |
| 申请号 |
US20030336129 |
申请日期 |
2003.01.03 |
| 申请人 |
MALLIKARJUNASWAMY SHEKAR;IMTIAZ SOHEL |
发明人 |
MALLIKARJUNASWAMY SHEKAR;IMTIAZ SOHEL |
| 分类号 |
H01L27/02;H01L29/739;(IPC1-7):H01L21/822 |
主分类号 |
H01L27/02 |
| 代理机构 |
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