| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of preventing hemispheric parts from being formed at the upper surface of an oxide layer after carrying out an SOG(Spin On Glass) layer forming process. CONSTITUTION: After a plurality of lower metal lines(13) is formed at the upper portion of a semiconductor substrate structure(11), the first plasma oxide layer(14) is formed along the upper surface of the resultant structure. Then, an SOG layer(15) is formed at the upper portion of the resultant structure for completely filling the gaps between the lower metal lines. The second plasma oxide layer(16) is formed on the entire surface of the SOG layer. At this time, the second plasma oxide layer is formed by carrying out a plasma CVD(Chemical Vapor Deposition) at the upper portion of the SOG layer during the heat treatment of the resultant structure.
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