| 发明名称 |
CCD Wafers with titanium refractory metal |
| 摘要 |
<p>An interconnect layer 18 comprises a sandwich of alternating TiN and Ti layers. The layers deposited in a collimated sputtering chamber supplied with nitrogen and having a titanium target. The interconnect may be used in CMOS active pixel sensors.</p> |
| 申请公布号 |
GB2354109(B) |
申请公布日期 |
2004.07.14 |
| 申请号 |
GB19990021392 |
申请日期 |
1999.09.11 |
| 申请人 |
* MITEL CORPORATION;* ZARLINK SEMICONDUCTOR INC.;* DALSA SEMICONDUCTOR INC |
发明人 |
ROBERT * GROULX;RAYMOND * FROST;YVES * TREMBLAY |
| 分类号 |
H01L21/3205;H01L21/768;H01L23/532;H01L27/148;(IPC1-7):H01L21/283;H01L23/52 |
主分类号 |
H01L21/3205 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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