| 摘要 |
The laser is made of III nitride semiconductor with a first clad layer (104) of first conductivity type on a substrate (101), an active layer (106) on the first clad layer, a second clad layer (108) of the second conductivity type on the active layer and a buried layer (11) formed on the second clad layer with an aperture constricting current into a selected region in the active layer. The second clad layer has a ridge located inside the aperture of the buried layer, where the buried layer does not substantially absorb light emitted from the active layer having a refractive index substantially the same as that of the second layer. |
