METHOD FOR SUPPLYING OXYGEN ON WAFER

摘要

PURPOSE: A method for supplying oxygen on a wafer is provided to prevent resistance from being increased by an excessive supply of oxygen by gradually supplying oxygen in an RTA(rapid thermal annealing) process performed on a wafer. CONSTITUTION: Impurities are injected to a wafer to perform heat treatment processes during a stabilization interval(1), a temperature increasing interval(2), a temperature maintaining interval(3) and a temperature decreasing interval(4). Oxygen is supplied to the wafer only during the stabilization interval and the temperature increasing interval among the heat treatment processes.