Method for producing a sublithographic gate structure for field effect transistors, and for producing an associated field effect transistor, an associated inverter, and an associated inverter structure,申请号AU20030289828-传众专利搜索

发明名称	Method for producing a sublithographic gate structure for field effect transistors, and for producing an associated field effect transistor, an associated inverter, and an associated inverter structure
摘要
申请公布号	AU2003289828(A8)	申请公布日期	2004.07.14
申请号	AU20030289828	申请日期	2003.12.09
申请人	INFINEON TECHNOLOGIES AG	发明人	HELMUT TEWS;RODGER FEHLHABER
分类号	H01L21/28;H01L21/8234;H01L21/84;(IPC1-7):H01L21/336;H01L21/768;H01L21/823;H01L27/092;H01L29/423;H01L29/78	主分类号	H01L21/28
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