| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to prevent a gap-fill void and mechanical stress that are generated in using an HDP(high density plasma) oxide layer as an isolation layer of a device not greater than 0.1 micrometer by using a PSOG(polysilanzane-based inorganic spin-on-glass) layer as an isolation layer and by forming a nitride layer functioning as an etch stop layer only on an isolation region. CONSTITUTION: A pad oxide layer and a pad nitride layer are formed on a semiconductor substrate(201). A predetermined region of the pad nitride layer and the pad oxide layer is etched to expose the semiconductor substrate. A predetermined depth of the exposed semiconductor substrate is etched to form a trench. After a PSOG layer is formed on the resultant structure to fill the trench, an etch process is performed even on a predetermined depth of the trench to leave the PSOG layer. After a nitride layer is formed on the resultant structure, the nitride layer and the pad nitride layer are polished. The residual pad nitride layer and the residual pad oxide layer are removed to form an isolation layer in the trench wherein the PSOG layer and the nitride layer are stacked. After a gate is formed on the resultant structure, a junction region(211) is formed on the substrate. After an interlayer dielectric(213) is formed on the resultant structure, a predetermined region of the interlayer dielectric is etched to form a contact hole(214) exposing a predetermined region of the substrate.
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