| 发明名称 |
System and method for control of hardmask etch to prevent pattern collapse of ultra-thin resists |
| 摘要 |
The present invention relates to systems and methods for mitigating pattern collapse in ultra-thin resist processing. In one embodiment, the present invention relates to etching extremely fine patterns into a hardmask immediately after developing an ultra-thin resist, wherein the resist is not dried.
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| 申请公布号 |
US6762133(B1) |
申请公布日期 |
2004.07.13 |
| 申请号 |
US20010911241 |
申请日期 |
2001.07.23 |
| 申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
RANGARAJAN BHARATH;SUBRAMANIAN RAMKUMAR;PHAN KHOI A. |
| 分类号 |
G03F7/40;H01L21/027;H01L21/033;(IPC1-7):H01L4/302 |
主分类号 |
G03F7/40 |
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