发明名称 |
Power semiconductor device |
摘要 |
The present invention is to provide a power semiconductor device including a heat radiator having a principal surface and an insulating substrate bonded on the principal surface of the heat radiator via a first solder layer. The power semiconductor device also includes at least one semiconductor chip mounted on the insulating substrate via a second solder layer. The insulating substrate has a thin-layer and thick-layer edges, and is bonded on the principal surface of the heat radiator so that the first solder layer has a thickness thinner towards a direction from the thin-layer edge to the thick-layer edge (T1>T2). Also, the semiconductor chip is mounted on the insulating substrate so that a first distance between the thick-layer edge and the semiconductor chip is less than a second distance between the thin-layer edge and the semiconductor chip (L1<L2).
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申请公布号 |
US6762491(B1) |
申请公布日期 |
2004.07.13 |
申请号 |
US20030445931 |
申请日期 |
2003.05.28 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
HATAE SHINJI;OKAMOTO KOREHIDE |
分类号 |
H01L23/373;H01L25/07;H01L25/18;(IPC1-7):H01L23/34 |
主分类号 |
H01L23/373 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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