发明名称 |
Narrow fin FinFET |
摘要 |
A method of forming fins for a double-gate fin field effect transistor (FinFET) includes forming a second layer of semi-conducting material over a first layer of semi-conducting material and forming double caps in the second layer of semi-conducting material. The method further includes forming spacers adjacent sides of each of the double caps and forming double fins in the first semi-conducting material beneath the double caps. The method also includes thinning the double fins to produce narrow double fins.
|
申请公布号 |
US6762483(B1) |
申请公布日期 |
2004.07.13 |
申请号 |
US20030348910 |
申请日期 |
2003.01.23 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
KRIVOKAPIC ZORAN;AN JUDY XILIN;DAKSHINA-MURTHY SRIKANTESWARA;WANG HAIHONG;YU BIN |
分类号 |
H01L21/336;H01L29/423;H01L29/786;(IPC1-7):H01L29/06 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|