发明名称 |
Nonvolatile memory device with sense amplifier securing reading margin |
摘要 |
In a sense amplifier, local I/O lines are maintained at a predetermined voltage by transistors. Transistors forming a current mirror supply an operating current according to a passing current which flows through transistors, to sense nodes. Transistors forming a current mirror extract an operating current according to the passing current which flows through transistors, from sense nodes. As a result, a voltage difference is generated in sense nodes in accordance with the operating current difference.
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申请公布号 |
US6762953(B2) |
申请公布日期 |
2004.07.13 |
申请号 |
US20030455479 |
申请日期 |
2003.06.06 |
申请人 |
RENESAS TECHNOLOGY CORP.;MITSUBISHI ELECTRIC ENGINEERING COMPANY LIMITED |
发明人 |
TANIZAKI HIROAKI;HIDAKA HIDETO;OOISHI TSUKASA |
分类号 |
G11C11/15;G11C7/06;G11C7/14;G11C11/16;G11C16/28;(IPC1-7):G11C11/00;G11C7/00 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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