发明名称 |
High-speed data programmable nonvolatile semiconductor memory device |
摘要 |
A semiconductor integrated circuit device includes a memory block. The device performs a programming operation, a pre-programming operation, and an erasing operation. The pre-programming operation by which each of the nonvolatile memory cells in the erased state in the memory block including the nonvolatile memory cells is pre-programmed to an intermediate state between the programmed and erased states.
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申请公布号 |
US6762956(B2) |
申请公布日期 |
2004.07.13 |
申请号 |
US20020241029 |
申请日期 |
2002.09.11 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
MORI SEIICHI;TANZAWA TORU |
分类号 |
G11C16/02;G11C16/00;G11C16/06;G11C16/14;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C16/04 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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