| 摘要 |
Post-manufacture variation of timing may be employed to address data-dependent degradation or creep in device characteristics affecting a differential circuit. One particular example of such data-dependent degradation or creep involves Negative Bias Temperature Instability (NBTI). In certain memory circuit configurations, NBTI can cause threshold voltage (Vt) of PMOS devices to increase by an amount that depends on the historical amount of voltage bias that has been applied across gate and source/drain nodes. In the case of many sense amplifier designs, a predominant value read out using the sense amp may tend to disparately affect one device (or set of devices) as compared with an opposing device (or set of devices). In other words, if the same data value is read over and over again, then one of two opposing PMOS devices of a typical sense amp will accumulate an NBTI-related Vt shift, while the opposing PMOS device will accumulate little or no shift. The accumulated mismatch tends to cause an increase in the sense amp fail-point.
|
