| 摘要 |
A method for fabricating a semiconductor device, includes the steps of forming a triple well including a first conductive type well in a semiconductor substrate, wherein a cell transistor is to be formed on the first conductive type well, sequentially forming a gate oxide layer and a gate electrode on a triple well, forming a source/drain region in the first conductive type well by implanting second conductive type dopant and forming a threshold voltage ion implantation region beneath the gate electrode by implanting first conductive type dopant to the first conductive type well with a ion implantation energy enough to pass through the gate electrode, wherein the threshold voltage ion implantation region surrounds the source/drain region.
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