发明名称 Bi-directional capable bucket brigade circuit
摘要 A time delay integration circuit in which a number of unit cell inputs (101, 103, 105, 107) along with their respective switches (170, 171, 172, 173) are input to a bi-directional BBD circuit (110). The BBD circuit performs an SCA TDI with reduced ROIC circuitry and compatibility with standard LSI processing. The bi-directional BBD circuit has numerous pairs of MOSFETs (111, 112; 113, 114; 115, 116; 117, 118; 119, 120; 121, 122; 123, 124; 125, 126; 127, 128; 129, 130; 131, 132; 133, 134; 135, 136; 137, 138; 139, 140; 141, 142) connected in series and numerous storage capacitors (151, 152,153, 154, 155, 156, 157, 158, 159, 160, 161, 162, 163, 164, 165, 166) having one of their terminals respectively connected between each of the MOSFET pairs and the other of their terminals alternately connected to clock phases Ø1 and Ø2. The gates of the MOSFETs in each pair are separated from the clock phases Ø1 and Ø2 and function respectively as screen gate and transfer clock for one direction of charge flow, and as transfer clock and screen gate for the other direction of charge flow. Transfer direction is changed by switching which MOSFET in a pair becomes clocked as a transfer gate and which becomes a screen gate.
申请公布号 US6762795(B1) 申请公布日期 2004.07.13
申请号 US20000479703 申请日期 2000.01.07
申请人 RAYTHEON COMPANY 发明人 CHEN LEONARD P.;CHANG HOWARD T.;HERRIN EILEEN M.;HEWITT MARY J.;VAMPOLA JOHN L.
分类号 G01J3/18;H01L21/84;H04N1/40;H04N3/14;(IPC1-7):H04N3/14 主分类号 G01J3/18
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