| 摘要 |
PURPOSE: A variable diode and a method for manufacturing the same are provided to be capable of removing parasitic capacitance by forming the first and second impurity region having the same size, respectively, and obtaining stable breakdown voltage by forming an electrode to the upper portion of an insulating layer. CONSTITUTION: A variable capacitance is provided with an N-type semiconductor substrate(101), an N-type impurity region(107) formed at the upper portion of the semiconductor substrate by heavily doped N-type dopants, a P-type impurity region(109) having the same size as the N-type impurity region formed on the N-type impurity region by heavily doped P-type dopants, an insulating layer(105) having an open portion formed on the resultant structure, and an electrode(111) formed on the P-type impurity region and prolonged to the upper portion of the insulating layer.
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