REACTION CHAMBER FOR DEPOSITING THIN FILM

摘要

PURPOSE: A reaction chamber for depositing a thin film is provided to effectively deposit a thin film with high purity, an excellent electrical characteristic and step coverage on a substrate by uniformly injecting plural reaction gases to the surface of the substrate. CONSTITUTION: A shower head includes an upper diffusion block(70), an intermediate diffusion block(80) and a lower diffusion block(90) that are sequentially coupled to a feeding part. A coupling unit(71) has the first feeding hole(73) connected to the first gas transfer pipe(53) and the second feeding hole(74) connected to the second gas transfer pipe(54). A plurality of the first main flow paths are radially and symmetrically formed in the upper diffusion block, connected to the first feeding holes. A plurality of the first sub flow paths are perpendicularly branched from the first main flow path. The upper diffusion block includes the coupling unit, the first main flow path and the first sub flow path. The intermediate diffusion block includes the second main flow path and the second sub flow path respectively corresponding to the first main flow path and the first sub flow path, the first distribution hole formed in the second sub flow path and the second main flow path at regular intervals and the second distribution hole. The lower diffusion block includes a plurality of the first injection holes for injecting the first reaction gas to the substrate and a plurality of the second injection holes for injecting the second reaction gas to the substrate.