METHOD FOR FORMING INSULATION FILM

摘要

PROBLEM TO BE SOLVED: To provide a method for modifying an insulation film by which an insulation film with a high film quality can be given to an electronic device having excellent characteristics such as high performance an/or low power consumption or the like. SOLUTION: A plasma P using a processing gas containing at least a rare gas is directed onto an insulation film formed by vapor-phase deposition that is arranged on a base material for electronic device, thereby modifying the insulation film. COPYRIGHT: (C)2004,JPO&NCIPI