| 摘要 |
An N-channel transistor protection circuit and method are disclosed that prevent gated diode breakdown in N-channel transistors that have a high voltage on their drain. The disclosed N-channel protection circuit may be switched in a high voltage mode between a high voltage level and a lower rail voltage. A high voltage conversion circuit prevents gated diode breakdown in N-channel transistors by dividing the high voltage across two N-channel transistors, MXU0 and MXU1, such that no transistor exceeds the breakdown voltage, Vbreakdown. An intermediate voltage drives the top N-channel transistor, MXU0. The top N-channel transistor, MXU0, is gated with a voltage level that is at least one N-channel threshold, Vtn, below the high voltage level, Vep, using the intermediate voltage level, nprot. The drain voltage of MXU0 will be at least one N-channel threshold, Vtn, lower than the input voltage level, nprot, and the drain voltage Vd of the bottom N-channel transistor, MXU1, is limited to less than the breakdown voltage, Vbreakdown.
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