发明名称 Charged particle beam apparatus
摘要 The object of the present invention is to transmit the position information of a defect that has been specified by means of a circuit pattern inspection apparatus quickly and precisely so that the position information is efficiently used in another apparatus. Marking is carried out on the peripheral area of the defect by use of a charged particle beam irradiation mechanism of the inspection apparatus. The marking realizes sharing of the defect position information with another apparatus. The marking technique includes deposition of a deposit and charging up by means of irradiation of a charged particle beam. The marking in the inspection apparatus allows the defect position information to be transmitted to another apparatus more correctly and easily, and as a result, analysis accuracy is improved and analysis time is shortened.
申请公布号 US2004129879(A1) 申请公布日期 2004.07.08
申请号 US20030700525 申请日期 2003.11.05
申请人 FURIKI MASANARI;KUROSAWA KOUICHI;KONNO TAKEHIKO;FUNATSU RYUICHI 发明人 FURIKI MASANARI;KUROSAWA KOUICHI;KONNO TAKEHIKO;FUNATSU RYUICHI
分类号 G01N23/225;H01J37/28;(IPC1-7):H01J37/256;G01R31/305 主分类号 G01N23/225
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