| 摘要 |
<P>PROBLEM TO BE SOLVED: To inexpensively and surely improve ESD (electrostatic discharge) resistance in a short time in a semiconductor integrated circuit which integrates a digital circuit and an analog circuit on the same semiconductor chip. <P>SOLUTION: This semiconductor integrated circuit device includes electrostatic breakdown protective circuits (1022a, 1022b) connected to the digital circuit (1010) for protecting against electrostatic breakdown, and electrostatic breakdown protective circuits (1062a, 1062b) connected to the analog circuit (1050) for protecting against the electrostatic breakdown in the semiconductor integrated circuit (1000) for integrating the digital circuit (1010) and the analog circuit (1050) in the same semiconductor chip. Wiring to which a ground power source (1035) connected to the electrostatic breakdown protective circuits (1022a, 1022b) is supplied, and wiring to which a ground power source (10375) connected to the electrostatic breakdown protective circuits (1062a, 1062b) is supplied, are connected outside the semiconductor integrated circuit (1000). <P>COPYRIGHT: (C)2004,JPO&NCIPI |
