| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching solution for removing molybdenum residues from a copper molybdenum film and an etching method therefore. SOLUTION: An etching solution for a copper single film or a copper molybdenum film composed of a first additive and a second additive containing a hydrogen peroxide, an organic acid, phosphate, and nitrogen (N), a fluorine compound and deionized water is provided. Specifically, the etching solution for the copper single film or the copper molybdenum film composed of the first additive and the second additive containing 5% by weight to 30% by weight of the hydrogen peroxide, 0.5% by weight to 5% by weight of the organic acid, 0.2% by weight to 5% by weight of phosphate, 0.2% by weight or 5% by weight of nitrogen (N) and containing 0.01% by weight to 1.0% by weight of the fluorine compound based on the total weight of the composition and the deionized water, and an etching method therefore are provided. COPYRIGHT: (C)2004,JPO&NCIPI
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